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| 6N135/ 6N136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features * * * * * * * * * Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity Bandwidth 2.0 MHz Open-Collector Output External Base Wiring Possible Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC NC A C NC 1 2 3 4 8 7 6 5 C (VCC) B (VB) C (VO) E (GND) i179081 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages Order Information Part Remarks CTR 7 %, DIP-8 CTR 19 %, DIP-8 CTR 7 %, SMD-8 (option 7) CTR 19 %, DIP-8 400 mil (option 6) CTR 19 %, SMD-8 (option 7) CTR 19 %, SMD-8 (option 9) 6N135 6N136 6N135-X007 6N136-X006 6N136-X007 6N136-X009 Description The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltages Forward current Peak forward current Thermal resistance Power dissipation Tamb = 70 C t = 1.0 ms, duty cycle 50 % Maximum surge forward current t 1.0 s, 300 pulses/s Rth Pdiss Test condition Symbol VR IF IFSM Value 5.0 25 50 1.0 700 45 Unit V mA mA A K/W mW Document Number 83604 Rev. 1.4, 26-Oct-04 www.vishay.com 1 6N135/ 6N136 Vishay Semiconductors Output Parameter Supply voltage Output voltage Emitter-base voltage Output current Maximum output current Base current Thermal resistance Power dissipation Tamb = 70 C Pdiss IB Test condition Symbol VS VO VEBO IO Value - 0.5 to 15 - 0.5 to 15 5.0 8.0 16 5.0 300 100 Unit V V V mA mA mA K/W mW Coupler Parameter Isolation test voltage (between t = 1.0 s emitter and detector climate per DIN 50014 part 2, NOV 74 Pollution degree (DIN VDE 0109) Creepage Clearance Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Soldering temperature max. 10 s, dip soldering 0.5 mm from case bottom RIO RIO Tstg Tamb Tsld Test condition Symbol VISO Value 5300 Unit VRMS 2.0 7.0 7.0 175 mm mm 1012 10 11 C C C - 55 to + 125 - 55 to + 100 260 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reverse current Capacitance Temperature coefficient, forward voltage Test condition IF = 16 mA IR = 10 A VR = 5.0 V VR = 0 V, f = 1.0 MHz IF = 16 mA Symbol VF VBR IR CO VF/TA 5.0 0.5 125 -1.7 10 Min Typ. 1.6 Max 1.9 Unit V V A pF mV/C www.vishay.com 2 Document Number 83604 Rev. 1.4, 26-Oct-04 6N135/ 6N136 Vishay Semiconductors Output Parameter Logic low supply current Supply current, logic high Output voltage, output low Test condition IF = 16 mA, VO open, VCC = 15 V IF = 0 mA, VO open, VCC = 15 V IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA Output current, output high IF = 0 mA, VO = VCC = 5.5 V IF = 0 mA, VO = VCC = 15 V 6N135 6N136 Part Symbol ICCL ICCH VOL VOL IOH IOH Min Typ. 150 0.01 0.1 0.1 3.0 0.01 1 0.4 0.4 500 1 Max Unit A A V V nA A Coupler Parameter Capacitance (input-output) Test condition f = 1.0 MHz Symbol CIO Min Typ. 0.6 Max Unit pF Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 16 mA, VO = 0.4 V, VCC = 4.5 V Part 6N135 6N136 IF = 16 mA, VO = 0.5 V, VCC = 4.5 V 6N135 6N136 Symbol CTR CTR CTR CTR Min 7 19 5 15 Typ. 16 35 Max Unit % % % % Switching Characteristics Parameter High-low Low-high Test condition IF = 16 mA, VCC = 5.0 V, RL = 4.1 k IF = 16 mA, VCC = 5.0 V, RL = 1.9 k IF = 16 mA, VCC = 5.0 V, RL = 4.1 k IF = 16 mA, VCC = 5.0 V, RL = 1.9 k Part 6N135 6N136 6N135 6N136 Symbol tPHL tPHL tPLH tPLH Min Typ. 0.3 0.2 0.3 0.2 Max 1.5 0.8 1.5 0.8 Unit s s s s Common Mode Transient Immunity Parameter High Low Test condition IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 k IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 k IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 k IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 k Part 6N135 6N136 6N135 6N136 Symbol | CMH | | CMH | | CML | | CML | Min Typ. 1000 1000 1000 1000 Max Unit V/s V/s V/s V/s Document Number 83604 Rev. 1.4, 26-Oct-04 www.vishay.com 3 6N135/ 6N136 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 20 IF - LED Current in mA 25 (VCC = 5.0 V) IF=40mA IF=35mA IF=30mA IF=25mA IF=20mA IF=15mA 15 75C 10 25C 0C 5 Output Current, Io(mA) 20 15 10 5 0 IF=10mA IF=5mA 0 1.3 i6n135_03 1.4 1.5 1.6 1.7 i6n135_06 0 5 VF - LED forward Voltage 10 15 Output Voltage, Vo(V) 20 25 Figure 1. LED Forward Current vs.Forward Voltage Figure 4. Output Current vs. Output Voltage 30 IF LED Current in ma Output Current, Io(mA) 8 7 6 5 4 3 2 1 @ VO=0.4 V, VCC=5.0 IF = 20mA IF = 16mA IF = 10mA 20 IF = 2mA 10 IF = 1mA 0 0 i6n135_04 20 40 60 80 100 i6n135_07 0 -60 -40 -20 0 20 40 60 Temperature, Ta(C) 80 100 Ambient Temperature in C Figure 2. Permissible Forward LED Current vs. Temperature Figure 5. Output Current vs. Temperature 120 tp - Propagation Delay Time - ns Total Power in mW 900 800 700 600 500 400 300 200 100 0 -60 i6n135_08 100 Detector 80 60 40 20 0 0 20 40 60 80 Ambient Temperature in C 100 Emitter 6N136 @ VCC = 5.0 V, IF = 16 mA, RL = 1.9 k TpLH @ 3V TpLH @ 1.5V TpHL @ 1.5V TpHL @ 3V -40 -20 0 20 40 60 Temperature, Ta(C) 80 100 i6n135_05 Figure 3. Permissible Power Dissipation vs. Temperature Figure 6. Propagation Delay vs. Ambient Temperature www.vishay.com 4 Document Number 83604 Rev. 1.4, 26-Oct-04 6N135/ 6N136 Vishay Semiconductors 1400 tp - Propagation Delay Time - ns 0.6 iF/iO / Small Signal Current Transfer Ratio 1200 1000 800 600 400 200 0 -60 6N135 @ VCC = 5.0 V, IF = 16 mA, RL = 4.1 k (VCC = 5.0 V, RL = 100 ) 0.5 0.4 0.3 0.2 0.1 0 TpLH TpHL -40 -20 0 20 40 60 Temperature, Ta (C) 80 100 i6n135_11 0 5 10 IF / mA 15 20 25 i6n135_09 Figure 7. Propagation Delay vs. Ambient Temperature Figure 9. Small Signal Current Transfer Ratio vs. Quiescent Input Current 100 IOH - Collector Current, IC (nA) 10 1 0.1 0.01 VCC=VO=15 V VCC=VO=5 V 0.001 -60 i6n135_10 -40 -20 0 20 40 60 Temperature, TA (C) 80 100 Figure 8. Logic High Output Current vs.Temperature Pulse generator ZO=50 tr,tf=5 ns duty cycle 10% t100 s 1 IF 2 IF Monitor IF t 8 7 6 5 RL 5V VO 5V 1.5 V t 3 100 i VO CL 15 pF VOL tPHL 4 tPLH i6n135_01 Figure 10. Switching Times Document Number 83604 Rev. 1.4, 26-Oct-04 www.vishay.com 5 6N135/ 6N136 Vishay Semiconductors VCM 10 V IF 1 2 3 4 8 7 6 5 RL VO VO 5V A: IF=0 mA +VCM 5V 0V 10% tr tf 90% t 90% 10% A B VFF Pulse generator ZO=50 tr,tf=8 ns VO t VOL B: IF=16 mA t i6n135_02 Figure 11. Common-Mode Interference Immunity Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) www.vishay.com 6 Document Number 83604 Rev. 1.4, 26-Oct-04 6N135/ 6N136 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 Document Number 83604 Rev. 1.4, 26-Oct-04 www.vishay.com 7 6N135/ 6N136 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83604 Rev. 1.4, 26-Oct-04 |
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